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KSD1621 NPN Epitaxial Silicon Transistor
July 2005
KSD1621
NPN Epitaxial Silicon Transistor
High Current Driver Applications
* Low Collector-Emitter Saturation Voltage * Large Current Capacity and Wide SOA * Fast Switching Speed * Complement to KSB1121
Marking
16 PY
1
21 WW
Weekly code Year code hFE grage
SOT-89
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC PC P C* TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Ta = 25C unless otherwise noted
Parameter
Ratings
30 25 6 2 500 1.3 150 -55 ~ 150
Units
V V V A mW W C C
Collector Power Dissipation Junction Temperature Storage Temperature
2
Mounted on Ceramic Board (250mm x 0.8mm)
Electrical Characteristics T
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat)
a=
25C unless otherwise noted
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
Test Condition
IC = 10A, IE = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCB = 20V, IE = 0 VBE = 4V, IC = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 1.5A IC = 1.5A, IB = 75mA IC = 1.5A, IB = 75mA
Min.
30 25 6
Typ.
Max.
Units
V V V
100 100 100 65 0.18 0.85 560 0.4 1.2
nA nA
V V
(c)2005 Fairchild Semiconductor Corporation
1
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KSD1621 Rev. B2
KSD1621 NPN Epitaxial Silicon Transistor
Electrical Characteristics
Symbol
fT Cob tON tSTG tF
(Continued) Ta = 25C unless otherwise noted
Parameter
Current Gain Bandwidth product Output Capacitance Turn On Time * Storage Time * Fall Time *
Test Condition
VCE = 10V, IC = 50mA VCB = 10V, IE = 0, f = 1MHz VCC = 12V, VBE = 5V IB1 = -IB2 = 25mA IC = 0.5A, RL = 25
Min.
Typ.
150 19 60 500 25
Max.
Units
MHz pF ns ns ns
hFE Classification
Classification
hFE
R
100 ~ 200
S
140 ~ 280
T
200 ~ 400
U
280 ~ 560
Package Marking and Ordering Information
Device Marking
1621
Device
KSD1621
Package
SOT-89
Reel Size
13"
Tape Width
--
Quantity
4,000
KSD1621 Rev. B2
2
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KSD1621 NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 1. Static Characteristic
2.0
Figure 2. DC Current Gain
1000
IB = 50mA
IB = 30mA
IB = 20mA
VCE= 2V
IC[A], COLLECTOR CURRENT
1.6
hFE, DC CURRENT GAIN
IB = 10mA IB = 8mA IB = 6mA
100
1.2
0.8
IB = 4mA
0.4
10
IB = 2mA IB = 0
0.2 0.4 0.6 0.8 1.0
0.0 0.0
1 0.01
0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. DCollector-Emitter Saturation Voltage
10
Figure 4. Base-Emitter On Voltage
3.2
VCE(sat)[V], SATURATION VOLTAGE
IC = 10 IB
2.8
VCE = 2V
IC[A], COLLECTOR CURRENT
2.4 2.0 1.6 1.2 0.8 0.4 0.0 0.0
1
0.1
0.01 0.01
0.1
1
10
0.2
0.4
0.6
0.8
1.0
1.2
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 5. Collector Output Capacitance
1000
Figure 6. Current Gain Bandwidth Product
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
IE=0 f = 1MHz
VCE = 10V
Cob[pF], CAPACITANCE
100
100
10
1 0.1
1
10
100
10
0.1
1
VCB [V], COLLECTOR-BASE VOLTAGE
IC[A], COLLECTOR CURRENT
KSD1621 Rev. B2
3
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KSD1621 NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 7. Safe Operating Area
10
(Continued)
Figure 8. Power Derating
1.6
IC MAX. (Pulse) IC MAX. (DC)
s m 10
s 1m
IC[A], COLLECTOR CURRENT
PC[W], POWER DISSIPATION
s 0m 10
1.2
ou M nt
1
ed on Ce m ra
0.8
ic ar Bo d 50 (2
0.1
Ta=25 C Single Pulse Mounted on Ceramic Board 2 (250mm x 0.8mm)
o
m
0.4
No
m
2
Hea t Sin k
x 8m 0. ) m
0.01 0.1
0.0
1
10
100
0
50
o
100
150
200
VCE[V], COLLECTOR-EMITTER VOLTAGE
Ta[ C], AMBIENT TEMPERATURE
KSD1621 Rev. B2
4
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KSD1621 NPN Epitaxial Silicon Transistor
Mechanical Dimensions
SOT-89
4.50 0.20 1.65 0.10 C0.2
(0.50)
1.50 0.20 (0.40)
0.20
2.50
0.50 0.10 1.50 TYP 1.50 TYP
0.40 0.10 0.40
+0.10 -0.05
(1.10)
4.10
0.20
Dimensions in Millimeters
KSD1621 Rev. B2
5
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KSD1621 NPN Epitaxial Silicon Transistor
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I16
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
6 KSD1621 Rev. B2
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